By Editor , 25 October 2026
GlobalFoundries Moves RF GaN to Volume, Cuts RF Die Area 45%

Burlington – October 24, 2026 -- GlobalFoundries (GF) has qualified RFGaN1, its first RF GaN-on-silicon technology for volume production on 200mm wafers. It has also qualified SLATE, a wafer-bonding technology that cuts RF die area by up to 45% with no loss in RF performance.